Dominant scattering mechanisms in the low/high electric field transport in cryogenic 2D confinement in Silicon (110) with high-$\kappa$ oxides

The performance of silicon nano-devices at cryogenic temperatures is critical for quantum qubit control circuits and space applications.

Using multi-valley Monte Carlo simulations, we investigate electron transport in Si~(110) systems.

At low electric fields, phonon absorption becomes negligible, and mobility is governed by competition between remote Coulomb scattering~(RCS) at low inversion charge density and surface roughness scattering~(SRS) at high density, leading to a mobility peak.

High-$\kappa$ dielectrics such as $\mathrm{HfO_2}$ introduce remote phonon scattering~(RPS), which suppresses mobility.

Under high electric fields, phonon emission dominates at 4~K, limiting velocity enhancement and resulting in limited current improvement